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BCG004 4W GaN Power Transistor

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Description

BCG004 4W GaN Power Transistor 4W GaN Power Transistor (0.15µm x 960µm gate) The BeRex BCG004 is a GaN Power HEMT die with a nominal 0.15 micron gate .

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Datasheet Specifications

Part number
BCG004
Manufacturer
BeRex
File Size
531.94 KB
Datasheet
BCG004-BeRex.pdf
Description
4W GaN Power Transistor

Features

* 36.5 dBm Typical Saturated Output Power (P3dB) @ 12 GHz
* 10.5 dB Typical Saturated gain (G3dB) @ 12 GHz
* 55 % PAE Typical @ 12 GHz

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