50N035 N-Channel FET

Description

www.DataSheet4U.com Bay Linear Linear Excellence N-Channel Field Effect Transistor 50N035 .
The Bay Linear n-channel power field effect transistors are produced using high cell density DMOS technology , These devices are particularly suited f.

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Datasheet Specifications

Part number: 50N035
Manufacturer: Bay Linear
File Size: 66.88 KB
Datasheet: 50N035_BayLinear.pdf
Description: N-Channel FET

Features

* Critical DC Electrical parameters specified at elevated Temp. Rugged internal source-drain diode can eliminate the need for external Zener diode transient suppresser Super high density cell design for extremely low RDS(ON) VDSS = 30V RDS (ON) = 0.013 Ω ID = 52A Orderin

Applications

* such as automotive and other battery powered circuits where fast switching, low in-line power loss and resistance to transistors are needed. The TO-220 is offered in a 3-pin is universally preferred for all commercial-industrial applications at power dissipation level to approximately to 50 watts. A

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50N035 N-Channel FET Bay Linear

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