BF910N60 Datasheet - BYD

BF910N60 N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. Th.

BF910N60 Features

* z VDS =600 V z ID =10A z RDS(ON) =0.65 Ω TYP(VGS=10V,ID=5.0A) z Low CRSS (typical 16pF) z Fast switching Absolute Maximum Ratings Symbol Parameter VDS Drain-Source Voltage ID Drain Current(continuous)at Tc=25°C IDM Drain Current (pulsed) (Note1) VGS Gate-Source Voltage EAS SinglePulseAvalanch

BF910N60 Datasheet (256.52 KB)