BF975NF75B Datasheet (BYD Microelectronics)

BF975NF75B, 75V N-Channel MOSFET

This Power MOSFET device has specifically been designed to minimize input capacitance and gate charge.

It is therefore suitable as primary switch in advanced high-efficiency, high-frequency isolated DC-DC converters for Telecom and Computer applications.

It is also intended for any applications with

BF975NF75B Features

* z z z z z z VDS =75 V ID =80A Typical RDS(ON)=7.5m Ω (VGS=10V,ID=40A) Fast switching 100% avalanche tested Improved dv/dt capability Absolute Maximum Ratings Symbol VDS ID IDM VGS EAS IAR EAR dv/dt PD TJ,Tstg TL Parameter Drain-Source Voltage Drain Current(continuous)at Tc=25℃ Drain Current (pulsed