BLP05N08G - N-channel Enhanced Power MOSFET

BELLING

📥 Download Datasheet

BLP05N08G Datasheet Preview — Preview of BLP05N08G PDF

Datasheet Details

Part number	BLP05N08G
Manufacturer	BELLING
File Size	0.96 MB
Description	N-channel Enhanced Power MOSFET
Datasheet	BLP05N08G-BELLING.pdf

BLP05N08G Product details

Description

, BLP05N08G, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.This is suitable device for motor drivers and high speed switching applications.KEY CHARACTERISTICS Parameter Value Unit VDSS 85 V ID 120 A RDS(on).typ 4.4 mΩ

Features

Fast Switching.
Low On-Resistance ( RDS(on)≤5mΩ ).
Low Gate Charge.
Low Reverse transfer capacitances.
High avalanche ruggedness.
RoHS product.

📁 BLP05N08G Similar Datasheet

BLP05H6110XR - Power LDMOS transistor (Ampleon)
BLP05H6110XRG - Power LDMOS transistor (Ampleon)
BLP05H6150XR - Power LDMOS transistor (Ampleon)
BLP05H6150XRG - Power LDMOS transistor (Ampleon)
BLP05H6200XR - Power LDMOS transistor (Ampleon)
BLP05H6250XR - Power LDMOS transistor (Ampleon)
BLP05H6250XRG - Power LDMOS transistor (Ampleon)
BLP05H6350XR - Power LDMOS transistor (Ampleon)

Other Datasheets by BELLING

BLP021N10 - MOSFET
BLP023N10 - MOSFET
BLP02N08 - MOSFET
BLP038N10GL - MOSFET
BLP038N15 - MOSFET
BLP03N10 - MOSFET

Published: Nov 15, 2024 |