BLP038N10GL Datasheet (BELLING)

BLP038N10GL, MOSFET

, BLP038N10GL, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.

This is suitable device for Synchronous rectification and high speed switching applications.

KEY C

BLP038N10GL Features

* Fast Switching

* Low On-Resistance

* Low Gate Charge

* Low Reverse transfer capacitances

* High avalanche ruggedness

* RoHS product APPLICATIONS

* Synchronous rectification

* High speed switching applications TO-252 ORDERING INFORMATION Ordering Codes Package BLP0