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BLP038N10GL - MOSFET

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Datasheet Details

Part number BLP038N10GL
Manufacturer BELLING
File Size 938.80 KB
Description MOSFET
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BLP038N10GL Product details

Description

, BLP038N10GL, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.This is suitable device for Synchronous rectification and high speed switching applications.KEY CHARACTERISTICS Parameter Value Unit VDSS 100 V ID 120 A RDS(on)@10V.typ 3.3 mΩ RDS(on)@4.5V.typ 4.5 mΩ

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