MT42C4256 - 256K X 4 VRAM 256K x 4 DRAM

Austin Semiconductor

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Datasheet Details

Part number	MT42C4256
Manufacturer	Austin Semiconductor
File Size	1.30 MB
Description	256K X 4 VRAM 256K x 4 DRAM
Datasheet	MT42C4256_AustinSemiconductor.pdf

MT42C4256 Product details

Description

Address Inputs Column Enable DRAM Data In-Out/Write-Mask Bit Serial Enable Row Enable Serial Data Clock Serial Data In-Out Transfer Register/Q Output Enable Write-Mask Select/Write Enable Special Function Select Split-Register Activity Status 5V Supply Ground Ground (Important: Not Connected to internal Vss, Pin should be left open or tied to ground.

Features

Class B High-Reliability Processing.
DRAM: 262144 Words × 4 Bits SAM: 512 Words × 4 Bits.
Single 5-V Power Supply (±10% Tolerance).
Dual Port Accessibility.
Simultaneous and Asynchronous Access From the DRAM and SAM Ports.
Bidirectional-Data-Transfer Function Between the DRAM and the Serial-Data Register.
4 × 4 Block-Write Feature for Fast Area Fill Operations; As Many as Four Memory Address Locations Written per Cycle From an On-Chip.

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Published: Oct 5, 2009 |