The CLF1G0060-30 and CLF1G0060S-30 are 30 W general purpose broadband GaN HEMTs usable from DC to 6.0 GHz.
Table 1.
CW and pulsed RF application information Typical RF performance at Tcase = 25 C; IDq = 70 mA; VDS = 50 V in a class-AB broadband demo board.
| Part number | CLF1G0060-30 |
|---|---|
| Manufacturer | Ampleon |
| File Size | 514.08 KB |
| Description | Broadband RF power GaN HEMT |
| Datasheet |
 CLF1G0060-30 Datasheet
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| Part Number | Description | Manufacturer |
|---|---|---|
| CLF1G0035-100 | Broadband RF power GaN HEMT | NXP |
| CLF1G0035S-100 | Broadband RF power GaN HEMT | NXP |
| CLF10040 | Inductors | TDK |
| CLF10060NIT-100M-D | INDUCTORS | TDK |
| CLF10060NIT-101M-D | INDUCTORS | TDK |
| Part Number | Description |
|---|---|
| CLF1G0060-10 | Broadband RF power GaN HEMT |
| CLF1G0060S-10 | Broadband RF power GaN HEMT |
| CLF1G0060S-30 | Broadband RF power GaN HEMT |
| CLF1G0035-100 | Broadband RF power GaN HEMT |
| CLF1G0035-100P | Broadband RF power GaN HEMT |
The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.
