BLS9G3135L-400 Datasheet (Ampleon) - LDMOS S-band radar power transistor

BLS9G3135L-400, LDMOS S-band radar power transistor

400 W LDMOS power transistor for S-band radar applications in the frequency range from 3.1 GHz to 3.5 GHz.

Table 1.

Typical performance Typical RF performance at Tcase = 25 C; tp = 300 s;  = 10 %; IDq = 400 mA; in a class-AB demo circuit.

Test signal f VDS PL Gp D (GHz) (V) (W) (dB) (%)

BLS9G3135L-400 Features

* High efficiency

* Excellent ruggedness

* Designed for S-band operation

* Excellent thermal stability

* Easy power control

* Integrated dual sided ESD protection enables excellent off-state isolation

* High flexibility with respect to pulse formats

* Internally match