BLS9G2729L-350 Datasheet (Ampleon) - LDMOS S-band radar power transistor

BLS9G2729L-350, LDMOS S-band radar power transistor

350 W LDMOS power transistor for S-band applications in the frequency range from 2.7 GHz to 2.9 GHz.

Table 1.

Test information Typical RF performance at Tcase = 25 C; tp = 300 s;  = 10 %; IDq = 400 mA; in a class-AB demo circuit.

Test signal f VDS PL Gp D (GHz) (V) (W) (dB) (%) pulsed

BLS9G2729L-350 Features

* High efficiency

* Excellent ruggedness

* Designed for S-band operations

* Excellent thermal stability

* Easy power control

* Integrated dual sided ESD protection enables excellent off-state isolation

* High flexibility with respect to pulse formats

* Internally matc