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BLF2425M8LS140, BLF2425M8L140 - Power LDMOS transistor

BLF2425M8LS140 Description

BLF2425M8L140; BLF2425M8LS140 Power LDMOS transistor Rev.2 * 1 September 2015 Product data sheet 1.Product profile 1.1 General descriptio.
140 W LDMOS power transistor for Industrial, Scientific and Medical (ISM) applications at frequencies from 2400 MHz to 2500 MHz.

BLF2425M8LS140 Features

* High efficiency
* High power gain
* Excellent ruggedness
* Excellent thermal stability
* Integrated ESD protection
* Designed for broadband operation (2400 MHz to 2500 MHz)
* Internally matched
* Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous

BLF2425M8LS140 Applications

* at frequencies from 2400 MHz to 2500 MHz. The BLF2425M8L140 and BLF2425M8LS140 are designed for high-power CW applications and are assembled in high performance ceramic packages, available in eared and earless versions Table 1. Typical performance Typical RF performance at Tcase = 25 C; IDq = 130

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This datasheet PDF includes multiple part numbers: BLF2425M8LS140, BLF2425M8L140. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
BLF2425M8LS140, BLF2425M8L140
Manufacturer
Ampleon
File Size
365.35 KB
Datasheet
BLF2425M8L140-Ampleon.pdf
Description
Power LDMOS transistor
Note
This datasheet PDF includes multiple part numbers: BLF2425M8LS140, BLF2425M8L140.
Please refer to the document for exact specifications by model.

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