Description
The AOT8N60 & AOTF8N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.
Features
- VDS (V) = 700V @ 150°C ID = 8A RDS(ON) < 0.9 Ω (VGS = 10V) 100% UIS Tested! 100% R g Tested! C iss , C oss , C rss Tested!
TO-220
Top View
TO-220F
D
G G D G S D S S
Absolute Maximum Ratings TA=25°C unless otherwise noted AOT8N60 Parameter Symbol AOTF8N60 V Drain-Source Voltage 600 DS VGS Gate-Source Voltage ±30 Continuous Drain B Current Pulsed Drain Current Avalanche Current
C C
Units V V A A mJ mJ V/ns W W/ C °C °C
o
TC=25°C TC=100°C ID IDM IAR EAR
G
8 5 32 3.2 150 300 5 147 1.17 -50.
AOT8N60_AlphaOmegaSemiconductors.pdf
