Description
The AOT3N60 has been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.
Features
- VDS (V) = 700V @ 150°C ID = 2.5A RDS(ON) < 3.5 Ω (VGS = 10V) 100% UIS Tested! 100% R g Tested! C iss, C oss , C rss Tested!
Top View
D TO-220
G G S D S
Absolute Maximum Ratings TA=25°C unless otherwise noted Maximum Parameter Symbol VDS Drain-Source Voltage 600 VGS Gate-Source Voltage ±30 Continuous Drain TC=25°C 2.5 B Current TC=100°C ID 1.6 Pulsed Drain Current Avalanche Current
C C C
Units V V A A mJ mJ V/ns W W/ C °C °C
o
IDM IAR EAR EAS dv/dt PD TJ, TSTG TL Symbol RθJA RθCS RθJC Typic.
AOT3N60_AlphaOmegaSemiconductors.pdf
