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AOP600 MOSFET

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Description

www.DataSheet4U.com AOP600 Complementary Enhancement Mode Field Effect Transistor General .
The AOP600 uses advanced trench technology to provide excellent R DS(ON) and low gate charge.

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Features

* n-channel p-channel -30V VDS (V) = 30V ID = 7.5A (V GS = 10V) -6.6A RDS(ON) < 28m Ω < 35m Ω (VGS = -10V) < 43m Ω < 58m Ω (VGS =- 4.5V) D2 S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2 D2 D1 D1 D1 G2 S2 G1 S1 PDIP-8 n-channel p-channel Absolute Maximum Ratings T A=25°C unless otherwise noted Parameter Max n

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