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AOP608 - MOSFET

General Description

The AOP608 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge.

The complementary MOSFETs may be used in H-bridge, Inverters and other applications.

Standard Product AOP608 is Pb-free (meets ROHS & Sony 259 specifications).

Key Features

  • n-channel VDS (V) = 40V ID = 6.3A (VGS=10V) RDS(ON) < 33m Ω (VGS=10V) < 46m Ω (VGS=4.5V) p-channel -40V -5.5A (VGS = -10V) RDS(ON) < 45mΩ (VGS = -10V) < 63mΩ (VGS = -4.5V) D2 D1 S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2 D2 D1 D1 G2 S2 G1 S1 PDIP-8 n-channel p-channel Max p-channel -40 ±20 -5.5 -4.4 -20 2.5 1.6 -55 to 150 W °C A Units V V Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Max n-channel Symbol VDS Drain-Source Voltage 40 Gate-Source Voltage Continuous Drain Current.

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www.DataSheet4U.com AOP608 Complementary Enhancement Mode Field Effect Transistor General Description The AOP608 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications. Standard Product AOP608 is Pb-free (meets ROHS & Sony 259 specifications). AOP608L is a Green Product ordering option. AOP608 and AOP608L are electrically identical. Features n-channel VDS (V) = 40V ID = 6.3A (VGS=10V) RDS(ON) < 33m Ω (VGS=10V) < 46m Ω (VGS=4.5V) p-channel -40V -5.5A (VGS = -10V) RDS(ON) < 45mΩ (VGS = -10V) < 63mΩ (VGS = -4.5V) D2 D1 S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2 D2 D1 D1 G2 S2 G1 S1 PDIP-8 n-channel p-channel Max p-channel -40 ±20 -5.5 -4.4 -20 2.5 1.