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AON6404L - N-Channel MOSFET

General Description

The AON6404L combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).

This device is ideal for load switch and battery protection applications.

Key Features

  • VDS (V) = 30V ID = 85A (VGS = 10V) RDS(ON) < 2.2mΩ (VGS = 10V) RDS(ON) < 3.8mΩ (VGS = 4.5V) ESD Protected 100% UIS Tested! 100% Rg Tested! Top View Fits SOIC8 footprint ! SD SD SD GD DFN5X6 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current B,G TC=25°C TC=100°C ID Pulsed Drain Current IDM Continuous Drain Current A TA=25°C TA=70°C IDSM Avalanche Current IAS Single avalanche energ.

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AON6403L N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AON6404L N-Channel Enhancement Mode Field Effect Transistor General Description The AON6404L combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications. -RoHs Compliant -Halogen Free Features VDS (V) = 30V ID = 85A (VGS = 10V) RDS(ON) < 2.2mΩ (VGS = 10V) RDS(ON) < 3.8mΩ (VGS = 4.