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AON2801 - Dual P-Channel MOSFET

General Description

The AON2801 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V.

This device is suitable for use as a load switch or in PWM applications.

Key Features

  • VDS (V) = -20V ID = -3A (VGS = -4.5V) RDS(ON) < 120mΩ (VGS = -4.5V) RDS(ON) < 160mΩ (VGS = -2.5V) RDS(ON) < 200mΩ (VGS = -1.8V) DFN 2x2 Package S1 G1 D2 D1 D2 D1 G2 S2 Top Bottom Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain TA=25°C CurrentA TA=70°C Pulsed Drain Current C TA=25°C Power Dissipation A TA=70°C Junction and Storage Temperature Range Symbol VDS VGS ID IDM PDSM TJ, TSTG G1 G2 S1 S2 Maximum -20 ±8 -3 -2.3 -15 1.5 0.95 -55 to 150 Units V V A W.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AON2801 Dual P-Channel Enhancement Mode Field Effect Transistor General Description The AON2801 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. RoHS and Halogen-Free Compliant Features VDS (V) = -20V ID = -3A (VGS = -4.5V) RDS(ON) < 120mΩ (VGS = -4.5V) RDS(ON) < 160mΩ (VGS = -2.5V) RDS(ON) < 200mΩ (VGS = -1.8V) DFN 2x2 Package S1 G1 D2 D1 D2 D1 G2 S2 Top Bottom Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain TA=25°C CurrentA TA=70°C Pulsed Drain Current C TA=25°C Power Dissipation A TA=70°C Junction and Storage Temperature Range Symbol VDS VGS ID IDM PDSM TJ, TSTG G1 G2 S1 S2 Maximum -20 ±8 -3 -2.