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AOL1418 N-Channel FET

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Description

www.DataSheet4U.com AOL1418 N-Channel Enhancement Mode Field Effect Transistor General .
The AOL1418 uses advanced trench technology to provide excellent R DS(ON), low gate chargeand low gate resistance.

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Features

* VDS (V) = 30V ID = 85A (VGS = 10V) RDS(ON) < 6.5mΩ (VGS = 10V) RDS(ON) < 10.5mΩ (VGS = 4.5V) Fits SOIC8 footprint ! D Bottom tab connected to drain G S S G Absolute Maximum Ratings T A=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Dra

Applications

* OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor,

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