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AOL1414 N-Channel FET

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Description

www.DataSheet4U.com AOL1414 N-Channel Enhancement Mode Field Effect Transistor General .
The AOL1414 uses advanced trench technology to provide excellent R DS(ON), low gate chargeand low gate resistance.

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Features

* VDS (V) = 30V ID = 85A (VGS = 10V) RDS(ON) < 6.5mΩ (VGS = 10V) RDS(ON) < 7.5mΩ (VGS = 4.5V) UIS Tested Rg,Ciss,Coss,Crss Tested D D Bottom tab connected to drain G S S G Absolute Maximum Ratings T A=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage

Applications

* OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE Alpha & Omega Semiconductor, L

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