AOD413Y - P-Channel MOSFET

Product Overview

Alpha & Omega Semiconductors

Part number	AOD413Y
Manufacturer	Alpha & Omega Semiconductors
File Size	142.88 KB
Description	P-Channel MOSFET
Datasheet	AOD413Y Datasheet
Additional preview pages of the AOD413Y datasheet.

The AOD413Y uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance.

VDS (V) = -40V ID = -12A (VGS = -10V) RDS(ON) < 45mΩ (VGS = -10V) RDS(ON) < 69mΩ (VGS = -4.5V) D Top View Drain Connected to Tab G S G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current B,G Pulsed Drain Current Avalanche Current C Repetitive avalanche energy L=0.1mH TC=25°C Power Dissipation B Power Dissipation A TC=100°C TA=25°C TA=70°C Junction and Storage Temperature Range Thermal Charac.

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Published: Dec 20, 2006 |