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AO4904 Dual N-Channel Enhancement Mode Field Effect Transistor

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Description

AO4904 Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General .
The AO4904 uses advanced trench technology to provide excellent R DS(ON) and low gate charge.

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Datasheet Specifications

Part number
AO4904
Manufacturer
Alpha & Omega Semiconductors
File Size
169.20 KB
Datasheet
AO4904_AlphaOmegaSemiconductors.pdf
Description
Dual N-Channel Enhancement Mode Field Effect Transistor

Features

* VDS (V) = 30V ID = 6.9A (VGS = 10V) RDS(ON) < 27mΩ (VGS = 10V) RDS(ON) < 32mΩ (VGS = 4.5V) RDS(ON) < 50mΩ (VGS = 2.5V) SCHOTTKY VDS (V) = 30V, IF = 3A, VF=0.5V@1A D1 K D2 1 2 3 4 8 7 6 5 SOIC-8 A G2 S2 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source

Applications

* OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISIN OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, L

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