AO4900A Dual N-Channel Enhancement Mode Field Effect Transistor

Alpha & Omega Semiconductors

Description

AO4900A Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General .
The AO4900A uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

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Datasheet Specifications

Part number: AO4900A
Manufacturer: Alpha & Omega Semiconductors
File Size: 141.36 KB
Datasheet: AO4900A_AlphaOmegaSemiconductors.pdf
Description: Dual N-Channel Enhancement Mode Field Effect Transistor

Features

* VDS (V) = 30V ID = 6.9A (VGS = 10V) RDS(ON) < 27mΩ (VGS = 10V) RDS(ON) < 32mΩ (VGS = 4.5V) RDS(ON) < 50mΩ (VGS = 2.5V) SCHOTTKY VDS (V) = 30V, IF = 3A, VF=0.5V@1A D2 S2/A G2 S1 G1 1 2 3 4 8 7 6 5 D2/K D2/K D1 D1 G2 S2 K D1 SOIC-8 A G1 S1 Absolute Maximum Ratings T A=25°C unless otherwise noted

Applications

* OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor,

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AO4900A Dual N-Channel Enhancement Mode Field Effect Transistor Alpha & Omega Semiconductors

Alpha & Omega Semiconductors AO4900A-like datasheet