Datasheet4U Logo Datasheet4U.com

AO4826 - 60V Dual N-Channel MOSFET

General Description

The AO4826 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

This device is suitable for use as a load switch or in PWM applications.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
AO4826 Dual N-Channel 60V MOSFET VBsemi
AO4828 60V Dual N-ChanneI MOSFET UMW
AO4800 Dual N-Channel 30V MOSFET VBsemi
AO4801 Dual P-Channel 30V MOSFET VBsemi
AO4805 Dual P-Channel MOSFET VBsemi

Other Datasheets by Alpha & Omega Semiconductors

Part Number Description
AO4821 Dual P-Channel MOSFET
AO4822 30V Dual N-channel MOSFET
AO4822A 30V Dual N-channel MOSFET
AO4824 Dual N-Channel MOSFET
AO4828 60V Dual N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
AO4826 60V Dual N-Channel MOSFET General Description The AO4826 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Product Summary VDS (V) = 60V ID = 6.3A (VGS = 10V) RDS(ON) < 25mΩ (VGS = 10V) RDS(ON) < 30mΩ (VGS = 4.5V) 100% UIS Tested 100% Rg Tested Top View SOIC-8 Bottom View Pin1 Top View S2 G2 S1 G1 D2 D2 D1 D1 G1 D1 G2 S1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TA=25°C Current A TA=70°C Pulsed Drain Current B ID IDM Power Dissipation TA=25°C TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Maximum 60 ±20 6.3 5 40 2 1.