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AO4800BL Dual N-Channel MOSFET

AO4800BL Description

www.DataSheet4U.com AO4800B, AO4800BL Dual N-Channel Enhancement Mode Field Effect Transistor General .
The AO4800B/L uses advanced trench technology to provide excellent R DS(ON) and low gate charge.

AO4800BL Features

* VDS (V) = 30V ID = 6.9A (VGS = 10V) RDS(ON) < 27mΩ (VGS = 10V) RDS(ON) < 32mΩ (VGS = 4.5V) RDS(ON) < 50mΩ (VGS = 2.5V) UIS TESTED! Rg,Ciss,Coss,Crss Tested! S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2 D2 D1 D1 G1 D1 D2 SOIC-8 G2 S1 S2 Absolute Maximum Ratings T A=25°C unless otherwise noted Symbol Param

AO4800BL Applications

* OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor,

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Dual N-Channel MOSFET Alpha & Omega Semiconductors
Alpha & Omega Semiconductors AO4800BL-like datasheet