AO4800BL Dual N-Channel MOSFET

Alpha & Omega Semiconductors

Description

www.DataSheet4U.com AO4800B, AO4800BL Dual N-Channel Enhancement Mode Field Effect Transistor General .
The AO4800B/L uses advanced trench technology to provide excellent R DS(ON) and low gate charge.

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Datasheet Specifications

Part number: AO4800BL
Manufacturer: Alpha & Omega Semiconductors
File Size: 357.13 KB
Datasheet: AO4800BL_AlphaOmegaSemiconductors.pdf
Description: Dual N-Channel MOSFET

Features

* VDS (V) = 30V ID = 6.9A (VGS = 10V) RDS(ON) < 27mΩ (VGS = 10V) RDS(ON) < 32mΩ (VGS = 4.5V) RDS(ON) < 50mΩ (VGS = 2.5V) UIS TESTED! Rg,Ciss,Coss,Crss Tested! S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2 D2 D1 D1 G1 D1 D2 SOIC-8 G2 S1 S2 Absolute Maximum Ratings T A=25°C unless otherwise noted Symbol Param

Applications

* OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor,

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AO4800BL Dual N-Channel MOSFET Alpha & Omega Semiconductors

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