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AO4622 - 20V Dual MOSFET

General Description

The AO4622 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge.

The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.

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AO4622 20V Dual P + N-Channel MOSFET General Description The AO4622 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. Product Summary N-Channel P-Channel VDS (V) = 20V -20V ID = 7.3A (VGS=4.5V) -5A (VGS=-4.5V) RDS(ON) RDS(ON) < 23mΩ (VGS=10V) < 53mΩ (VGS = -4.5V) < 30mΩ (VGS=4.5V) < 87mΩ (VGS = -2.5V) < 84mΩ (VGS=2.