Datasheet4U Logo Datasheet4U.com

AO4624 - MOSFET

General Description

The AO4624 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge.

The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.

Standard product AO4624 is Pb-free (meets ROHS & Sony 259 specifications).

Key Features

  • n-channel VDS (V) = 30V ID = 6.9A (VGS=10V) RDS(ON) < 28mΩ (VGS=10V) < 42mΩ (VGS=4.5V) p-channel -30V -6A (VGS=-10V) RDS(ON) < 35mΩ (VGS = -10V) < 58mΩ (VGS = -4.5V) D2 S2 G2 S1 G1 www. DataSheet4U. com D1 1 2 3 4 8 7 6 5 D2 D2 D1 D1 G2 G1 S2 S1 SOIC-8 n-channel p-channel Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Max n-channel Symbol VDS Drain-Source Voltage 30 V Gate-Source Voltage ±20 GS Continuous Drain A Current Pulsed Drain Current Power Dissipation B Avalanch.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
AO4622 Complementary Trench MOSFET Kexin
AO4622A N- and P-Channel MOSFET VBsemi
AO4604 Complementary Trench MOSFET Kexin
AO4611 Dual-Channel MOSFET VBsemi
AO4612 Dual-Channel MOSFET VBsemi

Other Datasheets by Alpha & Omega Semiconductors

Part Number Description
AO4620 30V Dual P + N-Channel MOSFET
AO4621 MOSFET
AO4622 20V Dual MOSFET
AO4625 MOSFET
AO4600 MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
AO4624 Complementary Enhancement Mode Field Effect Transistor General Description The AO4624 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. Standard product AO4624 is Pb-free (meets ROHS & Sony 259 specifications). AO4624L is a Green Product ordering option. AO4624 and AO4624L are electrically identical. Features n-channel VDS (V) = 30V ID = 6.9A (VGS=10V) RDS(ON) < 28mΩ (VGS=10V) < 42mΩ (VGS=4.5V) p-channel -30V -6A (VGS=-10V) RDS(ON) < 35mΩ (VGS = -10V) < 58mΩ (VGS = -4.5V) D2 S2 G2 S1 G1 www.DataSheet4U.