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AO4456 N-Channel MOSFET

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Description

AO4456 N-Channel Enhancement Mode Field Effect Transistor General .
The AO4456 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge.

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Datasheet Specifications

Part number
AO4456
Manufacturer
Alpha & Omega Semiconductors
File Size
177.50 KB
Datasheet
AO4456_AlphaOmegaSemiconductors.pdf
Description
N-Channel MOSFET

Features

* VDS (V) = 30V ID =20A (VGS = 10V) RDS(ON) < 4.6mΩ (VGS = 10V) RDS(ON) < 5.6mΩ (VGS = 4.5V) D S S S G D D D D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current B TA=25°C Powe

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