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AO4451 - P-Channel MOSFET

General Description

The AO4451 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge.

This device is suitable for use as a load www.DataSheet4U.com switch.

The device is ESD protected.

Key Features

  • VDS (V) = -30V ID = -15 A (V GS = -10V) RDS(ON) < 7.7mΩ (VGS = -10V) RDS(ON) < 12mΩ (VGS = -4.5V) ESD Rating: 4KV HBM SOIC-8 Top View S S S G D D D D D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current B TA=25°C Power Dissipation A TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Max.

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📁 Similar Datasheet

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Other Datasheets by Alpha & Omega Semiconductors

Part Number Description
AO4450 40V N-Channel MOSFET
AO4452 100V N-Channel MOSFET
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AO4455 30V P-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AO4451 P-Channel Enhancement Mode Field Effect Transistor General Description The AO4451 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge. This device is suitable for use as a load www.DataSheet4U.com switch. The device is ESD protected. Standard Product AO4451 is Pb-free (meets ROHS & Sony 259 specifications). AO4451L is a Green Product ordering option. AO4451 and AO4451L are electrically identical. Features VDS (V) = -30V ID = -15 A (V GS = -10V) RDS(ON) < 7.7mΩ (VGS = -10V) RDS(ON) < 12mΩ (VGS = -4.