Datasheet4U Logo Datasheet4U.com

AO4447 - P-Channel MOSFET

AO4447 Description

AO4447 P-Channel Enhancement Mode Field Effect Transistor General .
www.

AO4447 Features

* VDS (V) = -30V ID = -15 A (VGS = -10V) Max RDS(ON) < 7.5mΩ (VGS = -10V) Max RDS(ON) < 12mΩ (VGS = -4V) ESD Rating: 4KV HBM The AO4447 uses advanced trench technology to excellent RDS(ON), and ultra-low low gate charge. This device is suitable for use as a load switch. The device is ESD protected. S

AO4447 Applications

* OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor,

📥 Download Datasheet

Preview of AO4447 PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • AO4447A-HF - P-Channel MOSFET (Kexin)
  • AO4448 - N-Channel MOSFET (Kexin)
  • AO4449 - P-Channel MOSFET (VBsemi)
  • AO4401 - P-Channel MOSFET (Freescale)
  • AO4402 - N-Channel MOSFET (Freescale)
  • AO4403 - P-Channel MOSFET (Freescale)
  • AO4403-HF - P-Channel MOSFET (Kexin)
  • AO4404 - N-Channel MOSFET (Freescale)

📌 All Tags

P-Channel MOSFET Alpha & Omega Semiconductors
Alpha & Omega Semiconductors AO4447-like datasheet