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AO4440 - N-Channel MOSFET

General Description

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Key Features

  • VDS (V) = 60V ID = 5A (VGS = 10V) RDS(ON) < 55mΩ (VGS = 10V) RDS(ON) < 75mΩ (VGS = 4.5V) The AO4440 uses advanced trench technology to excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM.

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AO4440 N-Channel Enhancement Mode Field Effect Transistor General Description www.DataSheet4U.com provide Features VDS (V) = 60V ID = 5A (VGS = 10V) RDS(ON) < 55mΩ (VGS = 10V) RDS(ON) < 75mΩ (VGS = 4.5V) The AO4440 uses advanced trench technology to excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AO4440 is Pb-free (meets ROHS & Sony 259 specifications). AO4440L is a Green Product ordering option. AO4440 and AO4440L are electrically identical D S S S G D D D D G S SOIC-8 Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation B Maximum 60 ±20 5 4 20 2.5 1.