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AS7C33256NTF18B 3.3V 256K x 18 Flowthrough Synchronous SRAM

AS7C33256NTF18B Description

April 2005 ® AS7C33256NTF18B 3.3V 256K x 18 Flowthrough Synchronous SRAM with NTDTM .
The AS7C33256NTF18B family is a high performance CMOS 4 Mbit synchronous Static Random Access Memory (SRAM) organized as 262,144 words × 18 bits and i.

AS7C33256NTF18B Features

* Organization: 262,144 words × 18 bits NTD™ architecture for efficient bus operation Fast clock to data access: 7.5/8.0/10.0 ns Fast OE access time: 3.5/4.0 ns Fully synchronous operation Flow-through mode Asynchronous ou

AS7C33256NTF18B Applications

* requiring random access or read-modify-write operations. NTD™ devices use the memory bus more efficiently by introducing a write latency which matches the one-cycle flowthrough read latency. Write data is applied one cycle after the write command and address, allowing the read pipeline to clear. www

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3.3V 256K Flowthrough Synchronous SRAM Alliance Semiconductor Corporation
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