Datasheet Specifications
- Part number
- AS7C33256NTF18B
- Manufacturer
- Alliance Semiconductor Corporation
- File Size
- 472.48 KB
- Datasheet
- AS7C33256NTF18B_AllianceSemiconductorCorporation.pdf
- Description
- 3.3V 256K x 18 Flowthrough Synchronous SRAM
Description
April 2005 ® AS7C33256NTF18B 3.3V 256K x 18 Flowthrough Synchronous SRAM with NTDTM .
Features
* Organization: 262,144 words × 18 bits NTD™ architecture for efficient bus operation Fast clock to data access: 7.5/8.0/10.0 ns Fast OE access time: 3.5/4.0 ns Fully synchronous operation Flow-through mode Asynchronous ouApplications
* requiring random access or read-modify-write operations. NTD™ devices use the memory bus more efficiently by introducing a write latency which matches the one-cycle flowthrough read latency. Write data is applied one cycle after the write command and address, allowing the read pipeline to clear. wwwAS7C33256NTF18B Distributors
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