Description
The ACT-D1M96S device is a high-speed 96Mbit synchronous dynamic random access memory (SDRAM) organized as 2 independent 512K X 48 X 2 banks.
Features
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6 Low Power Micron 1M X 16 Synchronous Dynamic Random Access Memory Chips in one MCM User Configureable as "2" Independent 512K X 48 X 2 Banks High-Speed, Low-Noise, Low-Voltage TTL (LVTTL) Interface 3.3-V Power Supply (±10% Tolerance) Separate Logic and Output Driver Power Pins Two Banks for On-Chip Interleaving (Gapless Accesses) Up to 50-MHz Data Rates CAS Latency (CL) Programmable to 2 Cycles From Column-Address Entry
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Burst Length Programmable to 4 or.
ACT-D1M96S_AeroflexCircuitTechnology.pdf