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TRW53601 - NPN SILICON RF POWER TRANSISTOR

TRW53601 Description

www.DataSheet4U.com TRW53601 NPN SILICON RF POWER TRANSISTOR .
The ASI TRW53601 is Designed for General Purpose Oscillator Applications up to 2. Diffused Ballast Resistor.

TRW53601 Features

* Diffused Ballast Resistors
* Omnigold™ Metalization System
* Common Emitter MAXIMUM RATINGS IC VCES PDISS TJ TSTG θJC 400 mA 50 V 3.0 W @ TC = 25 °C -65 °C to +200 °C DataSheet4U. com DataShee -65 °C to +200 °C 31 °C/W 1 = COLLECTOR 2 = EMITTER 3 = BASE CHARACTERISTICS

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Preview of TRW53601 PDF

Datasheet Details

Part number
TRW53601
Manufacturer
Advanced Semiconductor
File Size
208.46 KB
Datasheet
TRW53601_AdvancedSemiconductor.pdf
Description
NPN SILICON RF POWER TRANSISTOR

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NPN SILICON POWER TRANSISTOR Advanced Semiconductor
Advanced Semiconductor TRW53601-like datasheet

TRW53601 Stock/Price