AP98T06GP N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Advanced Power Electronics

Description

AP98T06GP RoHS-compliant Product Advanced Power Electronics Corp.▼ Simple Drive Requirement ▼ Lower Gate Charge ▼ Fast Switching Characteristic G N.
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cos.

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Datasheet Specifications

Part number: AP98T06GP
Manufacturer: Advanced Power Electronics
File Size: 89.72 KB
Datasheet: AP98T06GP-AdvancedPowerElectronics.pdf
Description: N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Applications

* G D TO-220(P) S Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 3 Rating 60 +20 80 320 250 -55 to 150 -55 to 150 Units V V A A W ℃ ℃ Total Power Dissipation St

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AP98T06GP N-CHANNEL ENHANCEMENT MODE POWER MOSFET Advanced Power Electronics

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