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AP9475M N-CHANNEL MOSFET

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Description

AP9475M Advanced Power Electronics Corp.▼ Simple Drive Requirement D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID G 60V 40mΩ 6.9A ▼ .
The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and.

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Applications

* and suited for low voltage applications such as DC/DC converters. D G S Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current 1 3 3 Rating 60 ±25 6.9 5.5 30 2.5 0.02 -55 t

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