AP30N30WI N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Advanced Power Electronics

Description

AP30N30WI Pb Free Plating Product Advanced Power Electronics Corp.▼ 100% Avalanche Test ▼ Simple Drive Requirement ▼ Lower On-resistance ▼ RoHS Comp.
AP30N30 from APEC provide the designer with the best combination of fast switching , low on-resistance and cost-effectiveness .

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AP30N30WI Datasheet Preview — Preview of AP30N30WI PDF

Datasheet Specifications

Part number: AP30N30WI
Manufacturer: Advanced Power Electronics
File Size: 109.87 KB
Datasheet: AP30N30WI-AdvancedPowerElectronics.pdf
Description: N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Applications

* G D S TO-3PF Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ IDM PD@TC=25℃ EAS IAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating 250 ±30 30 120 83 0.7 3 Units V V A A W W/℃ mJ A ℃ ℃ Total Power Dissipation Linear

AP30N30WI Distributors

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AP30N30WI N-CHANNEL ENHANCEMENT MODE POWER MOSFET Advanced Power Electronics

Advanced Power Electronics AP30N30WI-like datasheet