AP2R803GS-HF N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Advanced Power Electronics

Description

Advanced Power Electronics Corp.AP2R803GS-HF Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low On-resistance D ▼ Simple Drive Re.
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low. on- resistan.

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Datasheet Specifications

Part number: AP2R803GS-HF
Manufacturer: Advanced Power Electronics
File Size: 117.89 KB
Datasheet: AP2R803GS-HF-AdvancedPowerElectronics.pdf
Description: N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Applications

* using infrared reflow technique and suited for high current application due to the low connection resistance. BVDSS RDS(ON) ID G DS 30V 2.8mΩ 80A TO-263(S) Absolute Maximum Ratings Symbol Parameter VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ Drain-Source Voltage Gate-Source Voltage Continuous

AP2R803GS-HF Distributors

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AP2R803GS-HF N-CHANNEL ENHANCEMENT MODE POWER MOSFET Advanced Power Electronics

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