AP2906EY N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Advanced Power Electronics

Description

Advanced Power Electronics Corp.AP2906EY Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lower Gate Charge ▼ Capable of 2.5V Gate Dr.
AP2906 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching.

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Datasheet Specifications

Part number: AP2906EY
Manufacturer: Advanced Power Electronics
File Size: 68.28 KB
Datasheet: AP2906EY-AdvancedPowerElectronics.pdf
Description: N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Applications

* The SOT-26 package is widely used for all commercialindustrial applications. D1/D2 G1 G2 S1 S2 Absolute Maximum Ratings@Tj=25o. C(unless otherwise specified) Symbol Parameter Rating Units VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Drain-Source Voltage Gate-Source Voltage Drain Current

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AP2906EY N-CHANNEL ENHANCEMENT MODE POWER MOSFET Advanced Power Electronics

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