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AP2604Y N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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Description

AP2604Y Advanced Power Electronics Corp.▼ Fast Switching Characteristic ▼ Lower Gate Charge ▼ Small Footprint & Low Profile Package SOT-26 D D S N-.
Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectivenes.

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Datasheet Specifications

Part number
AP2604Y
Manufacturer
Advanced Power Electronics
File Size
70.16 KB
Datasheet
AP2604Y-AdvancedPowerElectronics.pdf
Description
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Applications

* D G S Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3, VGS @ 4.5V Continuous Drain Current3, VGS @ 4.5V Pulsed Drain Current 1 Rating 30 ±20 5.5 4.4 20 2 0.016 -55 to 150 -55 to 150 U

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