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AP2604GY - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description

Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device.

The S0T-26 package is universally used for all commercial-industrial applications.

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Full PDF Text Transcription

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AP2604GY Pb Free Plating Product Advanced Power Electronics Corp. ▼ Fast Switching Characteristic ▼ Lower Gate Charge ▼ Small Footprint & Low Profile Package ▼ RoHS Compliant SOT-26 D D S N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) G D D 30V 45mΩ 5.5A ID Description Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The S0T-26 package is universally used for all commercial-industrial applications. D G S Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current , VGS @ 4.5V Continuous Drain Current , VGS @ 4.5V Pulsed Drain Current 1 3 3 Rating 30 ±20 5.5 4.
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