Datasheet4U Logo Datasheet4U.com

AP2602GY-HF-3 - N-channel Enhancement-mode Power MOSFET

General Description

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness.

The SOT-26 package is widely used for commercial and industrial applications, where space is at a premium.

📥 Download Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Advanced Power Electronics Corp. AP2602GY-HF-3 N-channel Enhancement-mode Power MOSFET Simple Drive Requirement Supports 2.5V Gate Drive Lower On-resistance RoHS-compliant, halogen-free G S D BV DSS R DS(ON) ID 20V 34mΩ 6.3A Description S Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. D D G D The SOT-26 package is widely used for commercial and industrial applications, where space is at a premium. SOT-26 D Absolute Maximum Ratings Symbol VDS VGS ID at TA=25°C ID at TA=70°C IDM PD at TA=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating 20 +12 6.3 5 30 2 0.