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Advanced Power Electronics Corp.
AP2602GY-HF-3
N-channel Enhancement-mode Power MOSFET
Simple Drive Requirement Supports 2.5V Gate Drive Lower On-resistance RoHS-compliant, halogen-free G S D
BV DSS R DS(ON) ID
20V 34mΩ 6.3A
Description
S
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness.
D D G D
The SOT-26 package is widely used for commercial and industrial applications, where space is at a premium.
SOT-26
D
Absolute Maximum Ratings
Symbol VDS VGS ID at TA=25°C ID at TA=70°C IDM PD at TA=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current
1 3 3
Rating 20 +12 6.3 5 30 2 0.