AP2308GEN N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Advanced Power Electronics

Description

AP2308GEN Pb Free Plating Product Advanced Power Electronics Corp.▼ Capable of 2.5V gate drive ▼ Lower on-resistance ▼ 2KV ESD Capability D N-CHANN.
Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectivene.

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Datasheet Specifications

Part number: AP2308GEN
Manufacturer: Advanced Power Electronics
File Size: 101.17 KB
Datasheet: AP2308GEN_AdvancedPowerElectronics.pdf
Description: N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Applications

* D G S Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Drain-Source Voltage Gate-Source Voltage www. DataSheet4U. com Parameter Rating 20 ±6 Units V V A A A W W/ ℃ ℃ ℃ Continuous Drain Current , VGS @ 4.5V Continuous Drain Current , VGS @ 4.5V Pulsed Drain Curr

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AP2308GEN N-CHANNEL ENHANCEMENT MODE POWER MOSFET Advanced Power Electronics

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