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AP2301AGN-HF-3 P-CHANNEL ENHANCEMENT MODE POWER MOSFET

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Description

Advanced Power Electronics Corp.AP2301AGN-HF-3 P-channel Enhancement-mode Power MOSFET Simple Drive Requirement Lower On-resistance Surface Mount D.
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness.

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Applications

* where a small board footprint is required. This device is well suited for use in medium current applications such as load switches and DC-DC converters. D S SOT-23 G Absolute Maximum Ratings Symbol VDS VGS ID at T A =25°C ID at TA= 70°C IDM PD at TA=25°C TSTG TJ Parameter Drain-Source Voltage Gat

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