AP2306AGN-HF N-channel enhancement mode power MOSFET

Advanced Power Electronics

Description

AP2306AGN-HF Halogen-Free Product Advanced Power Electronics Corp.▼ Capable of 2.5V gate drive ▼ Lower on-resistance ▼ Surface mount package ▼ RoHS .
Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectivene.

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Datasheet Specifications

Part number: AP2306AGN-HF
Manufacturer: Advanced Power Electronics
File Size: 127.03 KB
Datasheet: AP2306AGN-HF_AdvancedPowerElectronics.pdf
Description: N-channel enhancement mode power MOSFET

Applications

* G S Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current , VGS @ 4.5V Continuous Drain Current , VGS @ 4.5V Pulsed Drain Current 1 3 3 Rating 30 +8 5 4 20 1.38 -55 to 150 -55 to 150 Units V

AP2306AGN-HF Distributors

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AP2306AGN-HF N-channel enhancement mode power MOSFET Advanced Power Electronics

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