AP2306AGN N-channel enhancement mode power MOSFET

Advanced Power Electronics

Description

AP2306AGN Pb Free Plating Product Advanced Power Electronics Corp.▼ Capable of 2.5V gate drive ▼ Lower on-resistance ▼ Surface mount package S D N-.
SOT-23 G Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-.

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Datasheet Specifications

Part number: AP2306AGN
Manufacturer: Advanced Power Electronics
File Size: 102.06 KB
Datasheet: AP2306AGN_AdvancedPowerElectronics.pdf
Description: N-channel enhancement mode power MOSFET

Applications

* D G S Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Drain-Source Voltage Gate-Source Voltage www. DataSheet4U. com Parameter Rating 30 ± 12 Units V V A A A W W/ ℃ ℃ ℃ Continuous Drain Current , VGS @ 4.5V Continuous Drain Current , VGS @ 4.5V Pulsed Drain C

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AP2306AGN N-channel enhancement mode power MOSFET Advanced Power Electronics

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