AP16N50W N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Advanced Power Electronics

Description

AP16N50W RoHS-compliant Product Advanced Power Electronics Corp.▼ Low On-resistance ▼ Simple Drive Requirement ▼ Fast Switching Characteristic G N-.
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cos.

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Datasheet Specifications

Part number: AP16N50W
Manufacturer: Advanced Power Electronics
File Size: 54.84 KB
Datasheet: AP16N50W-AdvancedPowerElectronics.pdf
Description: N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Applications

* with higher power level preclusion than TO-220 device. D S TO-3P Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ EAS TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1

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AP16N50W N-CHANNEL ENHANCEMENT MODE POWER MOSFET Advanced Power Electronics

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