AP11N50I N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Advanced Power Electronics

Description

Advanced Power Electronics Corp.AP11N50I Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low On-resistance ▼ Simple Drive Requiremen.
AP11N50 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching.

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Datasheet Specifications

Part number: AP11N50I
Manufacturer: Advanced Power Electronics
File Size: 54.51 KB
Datasheet: AP11N50I-AdvancedPowerElectronics.pdf
Description: N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Applications

* The TO-220CFM package is widely preferred for all commercialindustrial through hole applications. The mold compound provides a high isolation voltage capability and low thermal resistance between the tab and the external heat-sink. VDS @ Tj,max. RDS(ON) ID 550V 0.68Ω 11A GD S TO-220CFM(I) Abso

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AP11N50I N-CHANNEL ENHANCEMENT MODE POWER MOSFET Advanced Power Electronics

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