Datasheet Details
| Part number | AP02N90JB |
|---|---|
| Manufacturer | Advanced Power Electronics |
| File Size | 61.00 KB |
| Description | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Datasheet |
|
| Part number | AP02N90JB |
|---|---|
| Manufacturer | Advanced Power Electronics |
| File Size | 61.00 KB |
| Description | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Datasheet |
|
S AP02N90 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance.It provides the designer with an extreme efficient device for use in a wide range of power applications.The TO-251S short lead package is preferred for all commercialindustrial through-hole applications without lead-cutted.BVDSS RDS(ON) ID 900V 7.2Ω 1.9A GDS TO-251S Absolute Maximum Ratings@Tj=25oC.(unless otherwise specifie
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