AP02N90JB N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Advanced Power Electronics

Description

Advanced Power Electronics Corp.AP02N90JB Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Avalanche Test ▼ Fast Switching Chara.
S AP02N90 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switch.

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Datasheet Specifications

Part number: AP02N90JB
Manufacturer: Advanced Power Electronics
File Size: 61.00 KB
Datasheet: AP02N90JB-AdvancedPowerElectronics.pdf
Description: N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Applications

* The TO-251S short lead package is preferred for all commercialindustrial through-hole applications without lead-cutted. BVDSS RDS(ON) ID 900V 7.2Ω 1.9A GDS TO-251S Absolute Maximum Ratings@Tj=25oC. (unless otherwise specified) Symbol Parameter Rating Units VDS Drain-Source Voltage 900 V

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AP02N90JB N-CHANNEL ENHANCEMENT MODE POWER MOSFET Advanced Power Electronics

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