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AP02N90J, AP02N90H N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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Description

AP02N90H/J Pb Free Plating Product Advanced Power Electronics Corp.¡¿ ¡¿ ¡¿ Simple Drive Requirement Low On-resistance Fast Switching Characteristic.
S G D The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resist.

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This datasheet PDF includes multiple part numbers: AP02N90J, AP02N90H. Please refer to the document for exact specifications by model.
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Datasheet Specifications

Part number
AP02N90J, AP02N90H
Manufacturer
Advanced Power Electronics
File Size
40.26 KB
Datasheet
AP02N90H-AdvancedPowerElectronics.pdf
Description
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Note
This datasheet PDF includes multiple part numbers: AP02N90J, AP02N90H.
Please refer to the document for exact specifications by model.

Applications

* at power dissipation levels to approximately 50 watts. The through-hole version (AP02N90J) is available for lowprofile applications. S TO-252(H) G D S TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25¢J ID@TC=100¢J IDM PD@TC=25¢J EAS IAR TSTG TJ Parameter Drain-Source Voltage Gate-Sour

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