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THN6701B - SiGe NPN Transistor

AUK

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Datasheet Details

Part number	THN6701B
Manufacturer	AUK
File Size	546.71 KB
Description	SiGe NPN Transistor
Datasheet	THN6701B-AUK.pdf

THN6701B Product details

Features

s - High power gain GP = 14 dB at VCE = 6 V, IC = 400 mA, f = 465 MHz - High power POUT = 35 dBm(3W) at VCE = 6 V, ICQ = 50 mA, f = 465 MHz THN6701B SiGe NPN Transistor SOT-223 Unit in mm 6.5 3.0 4 3.5 7.0 12 2.3 0.7 4.6 3 Pin Configuration 1. Base 2. Emitter 3. Collector 4. Emitter.
Absolute Maximum Ratings (TA = 25 ℃) Param eter Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage Emitter to Base Breakdown Voltage Collector Current Total Power Dissipati.

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Published: Jan 30, 2017 |